| PART |
Description |
Maker |
| SFH4850E7800 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| SFH4056 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
OSRAM GmbH
|
| SFH435012 Q65110A2091 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
OSRAM GmbH
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| SFH4200 SFH4205 |
Leistungsstarke IR-Lumineszenzdiode
|
OSRAM GmbH
|
| Q62703Q6175 Q62703Q1094 |
GaAlAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
| LH-FSLH-S090C-0406A FSLH-S090C |
850 MHz - 950 MHz RF/MICROWAVE SPLITTER AND COMBINER, 1 dB INSERTION LOSS
2012 Size 850/950 MHz Chip Multilayer Splitter/Combiner
|
HITACHI METALS LTD
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
|
| Q65110A2742 SFH7222 SFH722212 |
GaAlAs-IR-Lumineszenzdiode (880 nm) und grüne GaP-LED (565 nm)
|
OSRAM GmbH
|
| Q65110A2741 SFH722112 |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
|
OSRAM GmbH
|
| MA4EXP950M-1277T MA4EXP950M-1277 |
850 MHz - 1050 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9.1 dB CONVERSION LOSS-MAX
Silicon Double Balanced HMIC Mixer, 850 - 1050 MHz
|
MACOM[Tyco Electronics]
|
| V23818-H308-L57 |
Small Form Factor Multimode 850 nm 622 Mbit/s OC-12 Transceiver with LCConnector 纤巧多模850纳米622兆比秒的OC - 12收发器连接器会⑩
Small Form Factor Multimode 850 nm 622 Mbit/s OC-12 Transceiver with LC⑩ Connector
Small Form Factor Multimode 850 nm 622 Mbit/s OC-12 Transceiver with LC Connector
|
Infineon Technologies AG
|
